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| INCHANGE Semiconductor isc Product Specification MJE5170/5171/5172 isc Silicon PNP Power Transistors DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -120V(Min)- MJE5170 = -140V(Min)- MJE5171 = -160V(Min)- MJE5172 *Low Saturation Voltage *Complement to Type MJE5180/5181/5182 APPLICATIONS *Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MJE5170 VCBO Collector-Base Voltage MJE5171 MJE5172 MJE5170 VCEO Collector-Emitter Voltage MJE5171 MJE5172 VEBO IC ICM IB B VALUE -120 -140 -160 -120 -140 -160 -5 -6 -10 -2 65 UNIT V V Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Collector Power Dissipation @ Ta=25 Junction Temperature Storage Temperature Range V A A A PC PC TJ Tstg W 2 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 1.92 62.5 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification MJE5170/5171/5172 isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER MJE5170 VCEO(SUS) Collector-Emitter Sustaining Voltage MJE5171 MJE5172 VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage MJE5170 ICEO Collector Cutoff Current MJE5171 MJE5172 MJE5170 ICES Collector Cutoff Current MJE5171 MJE5172 IEBO hFE-1 hFE-2 fT Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product IC= -6A; IB= -0.6A B CONDITIONS MIN -120 MAX UNIT IC= -30mA ;IB= 0 B -140 -160 -1.5 -2.0 -0.7 -0.7 -0.7 -0.4 -0.4 -0.4 -1.0 30 15 1.0 100 V V V IC= -6A; VCE= -4V VCE= -60V; IB= 0 B VCE= -70V; IB= 0 B mA VCE= -80V; IB= 0 B VCE= -120V;VEB= 0 VCE= -140V;VEB= 0 VCE= -160V;VEB= 0 VEB= -5V; IC=0 IC= -0.3A; VCE= -4V IC= -3A; VCE= -4V IC= -0.5A ;VCE= -10V;ftest= 1.0MHz mA mA MHz isc Websitewww.iscsemi.cn 2 |
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